multislice calculation software package xhrem and stem plug-in (Hrem Research Inc)
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Hrem Research Inc
multislice calculation software package xhrem and stem plug-in
Multislice Calculation Software Package Xhrem And Stem Plug In, supplied by Hrem Research Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/xhrem+stem+software+package/multislice+simulation+program+xhrem/pmc06098135__41598_2018_30941_MOESM1_ESM-41-11-15
Average 90 stars, based on 1 article reviews
Multislice Calculation Software Package Xhrem And Stem Plug In, supplied by Hrem Research Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/xhrem+stem+software+package/multislice+simulation+program+xhrem/pmc06098135__41598_2018_30941_MOESM1_ESM-41-11-15
Average 90 stars, based on 1 article reviews
multislice calculation software package xhrem and stem plug-in - by Bioz Stars,
2026-10
90/100 stars
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Software:Article Title: Direct observation of inclined a-type threading dislocation with a-type screw dislocation in GaN Article Snippet: Direct observation of inclined a-type threading dislocation with a-type screw dislocation in GaN Tohoru Matsubara, Kohei Sugimoto, Shin Goubara, Ryo Inomoto, Narihito Okada, and Kazuyuki Tadatomo Citation: Journal of Applied Physics 121, 185101 (2017); doi: 10.1063/1.4983254 View online: http://dx.doi.org/10.1063/1.4983254 View Table of Contents: http://aip.scitation.org/toc/jap/121/18 Published by the American Institute of Physics Articles you may be interested in Broadband mid-infrared superlattice light-emitting diodes Journal of Applied Physics 121, 185701185701 (2017); 10.1063/1.4983023 Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process Journal of Applied Physics 121, 184501184501 (2017); 10.1063/1.4983013 Improved on-state performance of AlGaN/GaN Fin-HEMTs by reducing the length of the nanochannel Journal of Applied Physics 110, 193502193502 (2017); 10.1063/1.4983557 Trench formation and corner rounding in vertical GaN power devices Journal of Applied Physics 110, 193506193506 (2017); 10.1063/1.4983558 Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography Journal of Applied Physics 110, 143101143101 (2017); 10.1063/1.4979786 Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations Journal of Applied Physics 110, 181110181110 (2017); 10.1063/1.4983026 Direct observation of inclined a-type threading dislocation with a-type screw dislocation in GaN Tohoru Matsubara,1,2,a) Kohei Sugimoto,1 Shin Goubara,1 Ryo Inomoto,1 Narihito Okada,1 and Kazuyuki Tadatomo1 1Graduate School of Sciences and Technology for Innovation Yamaguchi University, Ube, Yamaguchi 755-8611, Japan 2UBE Scientific Analysis Laboratory, Inc., Ube, Yamaguchi, 755-0001, Japan (Received 24 January 2017; accepted 27 April 2017; published online 10 May 2017) We investigated both the atomic arrangements in the core structure of threading dislocations (TDs) and their behaviors in unintentionally doped c-plane-GaN layers grown by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy using high angle annular dark-field scanning transmission electron microscopy (HAADF-STEM).. The extra image contrast near the core was attributed to an extra displacement in a-type TDs in addition to the core structures revealed in previous reports; we used the notation “with displacement” to describe the new core structure.. We found that TDs incline towards both the m- and a-directions from the c-direction. Article Title: V-shaped pits in HVPE-grown GaN associated with columnar inversion domains originating from foreign particles of α-Si 3 N 4 and graphitic carbon. Article Snippet: .. Finally, simulated STEM images and CBED patterns were obtained through simulations performed using the Article Title: Atomic-scale investigation of structural defects in GaN layer on c-plane sapphire substrate during initial growth stage Article Snippet: This content has been downloaded from IOPscience.. Please scroll down to see the full text.. Download details: IP Address: 141.117.125.76 This content was downloaded on 01/11/2016 at 18:03 Please note that terms and conditions apply. |